Semiconductor Surfaces

• Ab-initio calculation of the migration energy of a Si adatom on the Si(100) surface
  G. Brocks, P. J. Kelly and R. Car,
  in Proceedings of the 20th International Conference on the Physics of Semiconductors,
  edited by E. M. Anastassakis and J. D.Joannopoulos
  (World Scientific Publishing Co., Singapore, 1990), p.127.

• Ab-initio calculation of migration energies of adatoms on the Si(100) surface
  G. Brocks, P.J. Kelly and R. Car,
  in Computational Physics,
  Proceedings of the CP90 Europhysics Conference, Amsterdam,
  edited by A. Tenner (World Scientific, 1990).

• Binding and diffusion of a Si adatom on the Si(100) surface
  G. Brocks, P. J. Kelly and R. Car,
  Phys. Rev. Lett. 66, 1729-1732 (1991).

• The energetics of adatoms on the Si(100) surface
  G. Brocks, P. J. Kelly and R. Car,
  Surface Science 269-270, 860-866 (1992).

• The adsorption of Al on Si(100): a surface polymerization reaction
  G. Brocks, P. J. Kelly and R. Car,
  Phys. Rev. Lett. 70, 2786-2789 (1993).

• Application of the Car-Parrinello method to adsorption and diffusion processes at semiconductor surfaces
  G. Brocks, P. J. Kelly and R. Car,
  in Formation of Semiconductor Interfaces; Proceedings of the 4th International Conference, Juelich 1993},
  edited by B. Lengeler, H. Lüth, W. Mönch and J. Pollmann (World Scientific Publishing Co., Singapore, 1994), p.91-98.

• Aluminium on Si(100): growth and structure of the first layer
  G. Brocks, P. J. Kelly and R. Car,
  J. Vac. Sci. and Technology B 12, 2705-2708 (1994).

• Theoretical study of the Si(100) surface reconstruction
  A. Ramstad, G. Brocks and P. J. Kelly,
  Phys. Rev. B 51, 14504-14523 (1995).

• The dynamics and nucleation of Si ad-dimers on the Si(100) surface
  G. Brocks and P. J. Kelly,
  Phys. Rev. Lett. 76, 2362-2365 (1996).

update Mar 2005